High electron mobility transistors (HEMTs) represent a critical evolution in semiconductor technology by harnessing the advantages of wide bandgap materials such as gallium nitride (GaN) to achieve ...

One month after announcing a ferroelectric semiconductor at the nanoscale thinness required for modern computing components, a team has now demonstrated a reconfigurable transistor using that material ...

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

Amplitech Group, Inc. (NASDAQ:AMPG) shares are trading higher on Wednesday after the company announced the development and deployment of its proprietary low-noise cryogenic High Electron Mobility ...

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...

Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...

The TPH2006PS is said to be the first GaN high electron mobility transistor (HEMT) on SiC substrate to receive JEDEC qualification. The 600-V HEMT device comes from Transphorm Inc., Goleta, Calif., ...

The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.

High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.