DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...
After discussing the three transistor high-side buck p-mosfet driver (a recognised circuit and not mine) with some of EW’s sage commenters, I wondered once again if I could design something similar ...
A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
Weakness in demand for consumer electronics devices has pushed up small-signal and general-purpose MOSFET inventories, according to industry sources. Save my User ID and Password Some subscribers ...
Vishay Intertechnology, Inc. has released its new 30 V n-channel TrenchFET ® Gen IV power MOSFET that delivers increased power density and efficiency for mobile devices, consumer electronics and power ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
Advanced Power Electronics is looking to grow sales of its automotive products, which currently accounts for less than 3% of revenue, according to the Taiwan-based MOSFET company. Some subscribers ...
After discussing the three transistor high-side buck p-mosfet driver (a recognised circuit and not mine) with some of EW’s sage commenters, I wondered once again if I could design something similar ...
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